ENBIS-18 in Nancy
2 – 25 September 2018; Ecoles des Mines, Nancy (France)
Abstract submission: 20 December 2017 – 4 June 2018
Metrology Modelling Based on Process Parameters in Semiconductor Manufacturing
4 September 2018, 12:00 – 12:20
- Submitted by
- Aabir CHOUICHI
- Aabir Chouichi (Ecole des Mines de Saint-Etienne ( Campus George Charpak )), Jakey Blue (Ecole des Mines de Saint-Etienne ( Campus George Charpak )), Claude Yugma (Ecole des Mines de Saint-Etienne ( Campus George Charpak )), Francois Pasqualini (STMicroelectronics)
- Due to the continuous evolution of microchip applications at a rapid pace, semiconductor companies have faced more and more competitive market demands. In this regard, improving the overall chip performance to meet the specifications from customers has triggered the Integrated Circuit (IC) makers to collect as much data as possible throughout the whole production process. Among the collected data in IC fabrication, two types of data are of particular interest for the optimal process control. First, sensors embedded in the machines send out nearly real-time signals during a wafer process enable the timely actions on the machines. The metrology data retrieved by measuring the quality parameters over the wafers help to characterize the product performance as well as validating the process soundness.
Apart from monitoring the equipment/process faults, machine signals and wafer metrology can be used together to quantify the relationship between the recipe set-up and the metrology measurements. This is especially important given the fact that the leading edge manufacturing technology demands to reduce the measuring time as much as possible. Consequently, our research aims at modeling the link between machine parameters and metrology data. The predicted metrology can be used as the measured features in the daily routines of the process control. The obtained results are further validated in the industrial environment for potential implementation in real practice.
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